Interfacial structures between aluminum nitride and Cu–P–Sn–Ni brazing alloy with Ti film

Control of Ag electro chemical migration is crucial for long–term reliability electrical components in high–voltage applications. In this work, Cu was bonded onto an AlN substrate at temperatures between 650 °C and 950 1 h using a free Cu–P–Sn–Ni brazing filler metal with Ti as active addition. The interfacial structure the mechanical properties bond were both investigated. Three different phases which contain O observed during growth process Cu/AlN reaction layer: amorphous P–Ti–O phase, Ti–O phase rutile, TiO2. most stable occurred when rutile present, where particular orientation relationship observed: TiO2 (101)//AlN (0001), [010]//AlN [ $$11\overline{2}0$$ ]. probability fracture decreased bonding temperature increased. completely suppressed above 850 dominant interface.